Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate

10.1109/IWJT.2007.4279953

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書目詳細資料
Main Authors: Gao, F., Li, R., Chi, D.Z., Balakumar, S., Lee, S.J.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Conference or Workshop Item
出版: 2014
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/83946
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