Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
10.1109/LED.2007.900195
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| المؤلفون الرئيسيون: | , , , , |
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| التنسيق: | مقال |
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2014
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| الوصول للمادة أونلاين: | http://scholarbank.nus.edu.sg/handle/10635/83080 |
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sg-nus-scholar.10635-830802024-11-09T07:32:28Z Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure Ang, K.-W. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Electron mobility Silicon/germanium Strain-transfer structure (STS) Strained n-channel field-effect transistor (n-FET) 10.1109/LED.2007.900195 IEEE Electron Device Letters 28 7 609-612 EDLED 2014-10-07T04:37:01Z 2014-10-07T04:37:01Z 2007-07 Article Ang, K.-W., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007-07). Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure. IEEE Electron Device Letters 28 (7) : 609-612. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.900195 07413106 http://scholarbank.nus.edu.sg/handle/10635/83080 000247643900023 Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| topic |
Electron mobility Silicon/germanium Strain-transfer structure (STS) Strained n-channel field-effect transistor (n-FET) |
| spellingShingle |
Electron mobility Silicon/germanium Strain-transfer structure (STS) Strained n-channel field-effect transistor (n-FET) Ang, K.-W. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure |
| description |
10.1109/LED.2007.900195 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Ang, K.-W. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. |
| format |
Article |
| author |
Ang, K.-W. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. |
| author_sort |
Ang, K.-W. |
| title |
Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure |
| title_short |
Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure |
| title_full |
Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure |
| title_fullStr |
Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure |
| title_full_unstemmed |
Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure |
| title_sort |
strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83080 |
| _version_ |
1821222281182969856 |