Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs

• Main Authors: Liu, F., Wong, H.-S., Ang, K.-W., Zhu, M., Wang, X., Lai, D.M.-Y., Lim, P.-C., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Germanium (Ge) enrichment; Laser annealing (LA); Strained transistor
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82604
• 機構: National University of Singapore

10.1109/LED.2008.2001029