Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant

Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant

10.1109/LED.2011.2167650

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書目詳細資料
Main Authors: Tong, Y., Zhou, Q., Chua, L.H., Thanigaivelan, T., Henry, T., Yeo, Y.-C.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Article
出版: 2014
主題:
Carbon
Germanium
Ion implantation
Schottky diodes
Silicides
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/82495
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