Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3
10.1063/1.4819970
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| Main Authors: | , , , , , , , , |
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| 格式: | Article |
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2014
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| 在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/82123 |
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