Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K
10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7
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| Main Authors: | , , , |
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| 格式: | Article |
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2014
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| 在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/81047 |
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| 機構: | National University of Singapore |