High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD
10.1109/PVSC.2011.6186223
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| Main Authors: | , , , , |
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| 格式: | Conference or Workshop Item |
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2014
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| 在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/70486 |
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| 機構: | National University of Singapore |