Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds

• Main Authors: Wang, Y.J, Lin, H, Das, T, Hasan, M.Z, Bansil, A
• 其他作者: CENTRE FOR ADVANCED 2D MATERIALS
• 格式: Article
• 出版: 2020
• 主題: Atomic numbers; Band inversion; Brillouin zones; Chalcogenide compound; Cu-based; First-principles calculation; Inversion strength; Naturally occurring; Single point; Tetragonal structure; Three-dimensional (3D); Atoms; Calculations; Chalcogenides; Electric insulators; Positive ions; Three dimensional; Phase change memory
• 在線閱讀: https://scholarbank.nus.edu.sg/handle/10635/180987

10.1088/1367-2630/13/8/085017