Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

• Main Authors: Lu, W, Iwasa, Y, Ou, Y, Jinno, D, Kamiyama, S, Petersen, P.M, Ou, H
• 其他作者: MECHANICAL ENGINEERING
• 格式: Article
• 出版: 2020
• 主題: Aluminum; Aluminum coatings; Annealing; Anodic oxidation; Atomic layer deposition; Oxide films; Passivation; Silicon carbide; Thin films; X ray photoelectron spectroscopy; Aluminum oxides; Annealing temperatures; Atomic layer deposited; Luminescence efficiencies; Passivation effect; PL intensity; Surface passivation; Time-resolved; Porous silicon
• 在線閱讀: https://scholarbank.nus.edu.sg/handle/10635/178741

10.1039/c6ra27281a