Jia, Y., Lim, C., Bourdillon, A., Boothroyd, C., & SCIENCE, M. (2014). Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process.
استشهاد بنمط شيكاغوJia, Y.M., C.W Lim, A.J Bourdillon, C. Boothroyd, و MATERIALS SCIENCE. Transmission Electron Microscopy Observation of CMOS Devices of Titanium Self-aligned Silicide Technology With Nitrogen (N+) Implantation Process. 2014.
MLA استشهادJia, Y.M., et al. Transmission Electron Microscopy Observation of CMOS Devices of Titanium Self-aligned Silicide Technology With Nitrogen (N+) Implantation Process. 2014.
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