Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure

• المؤلفون الرئيسيون: Tang, Xiaohong, Mei, Ting, Wang, Yixin, Djie, Hery Susanto, Chin, Mee Koy, Nie, Dong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/99769; http://hdl.handle.net/10220/6419

Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature l...