Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure

• Main Authors: Tang, Xiaohong, Mei, Ting, Wang, Yixin, Djie, Hery Susanto, Chin, Mee Koy, Nie, Dong
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2010
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• 在線閱讀: https://hdl.handle.net/10356/99769; http://hdl.handle.net/10220/6419
• 機構: Nanyang Technological University

Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature l...