Interface strain study of thin Lu2O3/Si using HRBS

• المؤلفون الرئيسيون: Chan, T. K., Darmawan, P., Ho, C. S., Malar, P., Osipowicz, T., Lee, Pooi See
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97350; http://hdl.handle.net/10220/10513

The interface of thin Lu2O3 on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxid...