Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation

• Main Authors: Yuan, C. L., Darmawan, P., Chan, Mei Yin, Lee, Pooi See
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 出版: 2013
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• 在線閱讀: https://hdl.handle.net/10356/97258; http://hdl.handle.net/10220/10498

Amorphous Lu2O3 thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 4×10−5 A/cm2 at 1 V accumulation bias was obtained for 4.5 nm thick Lu2O3 thin film deposited at room tempera...