The electronic barrier height of silicon native oxides at different oxidation stages

• المؤلفون الرئيسيون: Qin, H. L., Goh, K. E. J., Troadec, C., Bosman, Michel, Pey, Kin Leong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/95358; http://hdl.handle.net/10220/9206

A systematic study on silicon native oxides grown in ambient air at room temperature is carried out using ballistic electron emission microscopy. The electronic barrier height of Au/native oxide was directly measured for native oxides at different oxidation stages. While the ballistic electron trans...