A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c

• المؤلفون الرئيسيون: Zhu, Di, Siek, Liter
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: 40 nm Standard CMOS; DRNTU::Engineering::Electrical and electronic engineering; Temperature Sensor
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/85863; http://hdl.handle.net/10220/48291
• المؤسسة: Nanyang Technological University

This paper describes the design of a high-accuracy smart temperature sensor in the 40 nm standard CMOS process. Due to process scaling, the high threshold voltages, large leakage currents and low intrinsic gains, etc., cause the realization of conventional high performance analog circuits to become...