Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering

• المؤلفون الرئيسيون: Zhang, Zi-Hui, Ju, Zhengang, Liu, Wei, Tan, Swee Tiam, Ji, Yun, Kyaw, Zabu, Zhang, Xueliang, Hasanov, Namig, Sun, Xiao Wei, Demir, Hilmi Volkan
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/80846; http://hdl.handle.net/10220/19562

The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface b...