Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
The low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique.
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Theses and Dissertations |
| 出版: |
2008
|
| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/4799 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|