Design and analysis of class-E power amplifier

• المؤلف الرئيسي: Khoo, Fatt Seng.
• مؤلفون آخرون: Zhang Yue Ping
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/46198
• المؤسسة: Nanyang Technological University

In this paper, based on the specification assigned, I have designed a low voltage Class-E Power Amplifier (PA) using the 0.18μm TSMC CMOS technology from BSIM3 model to achieve the following results: f = 5.8GHz, Pout = 13.003dBm, VDD = 1.8VDC, Bandwidth = 200MHz, Termination = 50Ω, Power Added E...