Enhanced resistive switching characteristics of conductive bridging memory device by a Co-Cu alloy electrode

• المؤلفون الرئيسيون: Lee, Calvin Xiu Xian, Dananjaya, Putu Andhita, Chee, Mun Yin, Poh, Han Yin, Tan, Funan, Thong, Jia Rui, Liu, Lingli, Lim, Gerard Joseph, Du, Yuanmin, Tan, Juan Boon, Lew, Wen Siang
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2024
• الموضوعات: Science::Physics; Cobalt Alloys; Platinum Alloys
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/173038
• المؤسسة: Nanyang Technological University

One of the main challenges in the development of conductive bridging random access memory (CBRAM) is the large stochastic nature of ion movement that ultimately leads to large parameter variability. In this study, the resistive switching variability of CBRAM devices is significantly improved by empl...