Avoiding abnormal grain growth when annealing selective laser melted pure titanium by promoting nucleation
In this study, the recrystallization process of selective laser melted (SLM) commercially pure titanium (CP-Ti) was followed by a quasi-in-situ electron backscatter diffraction (EBSD) method at 800 °C and 700 °C. Abnormal grain growth (AGG) initially emerges at the beginning of annealing at 800 °C a...
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Main Authors: | Chen, Kewei, Huang, De Jun, Li, Hua, Jia, Ning, Chong, Warren |
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其他作者: | School of Mechanical and Aerospace Engineering |
格式: | Article |
語言: | English |
出版: |
2022
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在線閱讀: | https://hdl.handle.net/10356/162543 |
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