Avoiding abnormal grain growth when annealing selective laser melted pure titanium by promoting nucleation

In this study, the recrystallization process of selective laser melted (SLM) commercially pure titanium (CP-Ti) was followed by a quasi-in-situ electron backscatter diffraction (EBSD) method at 800 °C and 700 °C. Abnormal grain growth (AGG) initially emerges at the beginning of annealing at 800 °C a...

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Main Authors: Chen, Kewei, Huang, De Jun, Li, Hua, Jia, Ning, Chong, Warren
其他作者: School of Mechanical and Aerospace Engineering
格式: Article
語言:English
出版: 2022
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在線閱讀:https://hdl.handle.net/10356/162543
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