Stretchable HfO₂-based resistive switching memory using the wavy structured design

• المؤلفون الرئيسيون: Wang, Ming, Guo, Kexin, Cheng, Hongfei
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Aeronautical engineering; Wavy Structure; Flexible Electronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/159684

In this letter, we report a stretchable HfO2-based resistive switching memory device utilizing the wavy structured strategy. The fabricated Cu/HfO2/Au device shows reliable and reversible resistive switching behaviors up to a stretching strain of 20%. After being released, the reproducible memory ch...