Dual role of Cu-chalcogenide as hole-transporting layer and interface passivator for p–i–n architecture perovskite solar cell

• المؤلفون الرئيسيون: Sadhu, Anupam, Rai, Monika, Salim, Teddy, Jin, Xin, Tan, Joel Ming Rui, Leow, Shin Woei, Ahmed, Mahmoud Gamal, Magdassi, Shlomo, Mhaisalkar, Subodh Gautam, Wong, Lydia Helena
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Materials::Energy materials; Defects; Inorganic Hole-Transport Layers; Interface Passivation
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/151843
• المؤسسة: Nanyang Technological University

Inorganic hole-transport layers (HTLs) are widely investigated in perovskite solar cells (PSCs) due to their superior stability compared to the organic HTLs. However, in p–i–n architecture when these inorganic HTLs are deposited before the perovskite, it forms a suboptimal interface quality for the...