A low-noise, positive-input, negative-output voltage generator for low-to-moderate driving capacity applications

• المؤلفون الرئيسيون: Khanna, Devrishi, Boon, Chirn Chye, Choi, Pilsoon, Siek, Liter, Liu, Bei, Li, Chenyang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; Regulated Negative Voltage Generator; Gallium Nitride (GaN) Power Amplifier (PA) Biasing
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/144145
• المؤسسة: Nanyang Technological University

In this paper, a generic, low-noise, negative-voltage generator with wide tuning range and moderate driving capacity is presented. The highly integrated solution, incorporating a fully-integrated charge-pump and a regulator block, requires only one off-chip capacitor that can be shared with the supply decoupling capacitors. The fully integrated charge-pump operation is analyzed quantitatively, and a closed-form expression of its output impedance is derived. Powered from a single 3.3-V dc input, the output has a tuning range from −4.4 to +2.1 V for biasing applications, while the design supports a maximum load current of 250, 550, and 800 µA for the regulated output voltage at −3.0, −1.5, and 1.5 V, respectively. The measured steady-state ripple is under 3 mVPP, while the noise voltage at the charge-pump operating frequency harmonics is below 130 µVrms and the noise floor is under 5 µVrms. The design is also the application verified with a gallium nitride power amplifier, thus further confirming its low-noise performance. Implemented in CMOS 180-nm process, the prototype chip occupies an area of 0.55 mm2.