Printed high mobility AMOS thin film transistors

• المؤلف الرئيسي: Evanniles, Edbert
• مؤلفون آخرون: Nripan Mathews
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2020
• الموضوعات: Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/138632

The report is done to investigate the effects the addition of gallium to the IZO thin film transistor and hydrogen peroxide to the IGZO solution processed thin film transistor. One major issue of the IZO Thin film transistor is with the instability of the device caused by the formation of vacancy de...