Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation

由 Ling, C.H., Kwok, C.Y.
出版 2014

EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.

由 Ling, C.H., Kwok, C.Y., Prasad, K.
出版 2014

SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.

由 Ling, C.H., Kwok, C.Y., Prasad, K.
出版 2014

RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.

由 Ling, C.H., Kwok, C.Y., Prasad, K.
出版 2014

Quasi-Fermi level variation in the space-charge region of a grain boundary

由 Ling, C.H., Kwok, C.Y., Tay, T.M.
出版 2014

Relaxation of trapped charge at silicon grain boundary states

由 Ling, C.H., Kwok, C.Y., Woo, P.K.
出版 2014

QUASI-FERMI LEVEL VARIATION IN THE SPACE-CHARGE REGION OF A GRAIN BOUNDARY.

由 Ling, C.H., Kwok, C.Y., Tay, T.M.
出版 2014

New multiple-function logic family

由 Tan, Y.K., Lim, Y.C., Kwok, C.Y., Ling, C.H.
出版 2014

Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures

由 Ling, C.H., Kwok, C.Y., Chan, E.G., Tay, T.M.
出版 2014