Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation

بواسطة Ling, C.H., Kwok, C.Y.
منشور في 2014

EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.

بواسطة Ling, C.H., Kwok, C.Y., Prasad, K.
منشور في 2014

SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.

بواسطة Ling, C.H., Kwok, C.Y., Prasad, K.
منشور في 2014

RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.

بواسطة Ling, C.H., Kwok, C.Y., Prasad, K.
منشور في 2014

Quasi-Fermi level variation in the space-charge region of a grain boundary

بواسطة Ling, C.H., Kwok, C.Y., Tay, T.M.
منشور في 2014

Relaxation of trapped charge at silicon grain boundary states

بواسطة Ling, C.H., Kwok, C.Y., Woo, P.K.
منشور في 2014

QUASI-FERMI LEVEL VARIATION IN THE SPACE-CHARGE REGION OF A GRAIN BOUNDARY.

بواسطة Ling, C.H., Kwok, C.Y., Tay, T.M.
منشور في 2014

New multiple-function logic family

بواسطة Tan, Y.K., Lim, Y.C., Kwok, C.Y., Ling, C.H.
منشور في 2014

Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures

بواسطة Ling, C.H., Kwok, C.Y., Chan, E.G., Tay, T.M.
منشور في 2014