Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate

由 Dolmanan, S. B., Teo, S. L., Arulkumaran, Subramaniam, Lin, Vivian Kaixin, Ng, Geok Ing, Vicknesh, Sahmuganathan, Tan, Joyce Pei Ying, Kumar, M. Krishna, Tripathy, Sudhiranjan
出版 2013

Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator

由 Bera, L. K., Tham, W. H., Kajen, R. S., Dolmanan, S. B., Kumar, M. Krishna, Lin, Vivian Kaixin, Ang, Diing Shenp, Bhat, T. N., Yakovlev, N., Tripathy, Sudhiranjan
出版 2014

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

由 Dolmanan, S. B., Kajen, R. S., Bera, L. K., Teo, S. L., Wang, W. Z., Li, H., Lee, D., Han, S., Tripathy, Sudhiranjan, Lin, Vivian Kaixin, Tan, Joyce Pei Ying, Kumar, M. Krishna, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Todd, Shane, Lo, Guo-Qiang
出版 2013