نتائج بحث المؤلف

1

Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)

Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)

بواسطة CHUA, SOO JIN, LI, PENG, HAO, MAOSHENG, ZHANG, JI
منشور في 2012

احصل على النص الكامل

Patent

2

Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)

Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)

بواسطة CHUA, SOO JIN, LI, PENG, HAO, MAOSHENG, ZHANG, JI
منشور في 2012

احصل على النص الكامل

Patent