APA引文

Latt, K., Lee, Y., Seng, H., Osipowicz, T., & PHYSICS. (2014). Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide.

Chicago Style Citation

Latt, K.M., Y.K Lee, H.L Seng, T. Osipowicz, and PHYSICS. Diffusion Barrier Properties of Ionized Metal Plasma Deposited Tantalum Nitride Thin Films between Copper and Silicon Dioxide. 2014.

MLA引文

Latt, K.M., et al. Diffusion Barrier Properties of Ionized Metal Plasma Deposited Tantalum Nitride Thin Films between Copper and Silicon Dioxide. 2014.