Liow, T., Tan, K., Weeks, D., Lee, R., Zhu, M., Hoe, K., . . . ENGINEERING, E. &. C. (2014). Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content.
Chicago Style CitationLiow, T.-Y., et al. Strained FinFETs With In-situ Doped Si1-yCy Source and Drain Stressors: Performance Boost With Lateral Stressor Encroachment and High Substitutional Carbon Content. 2014.
MLA CitationLiow, T.-Y., et al. Strained FinFETs With In-situ Doped Si1-yCy Source and Drain Stressors: Performance Boost With Lateral Stressor Encroachment and High Substitutional Carbon Content. 2014.
Warning: These citations may not always be 100% accurate.