P-channel I-MOS transistor featuring silicon nano-wire with multiple-gates, strained Si1-yCy I-region, in situ doped Si 1-yCy source, and sub-5 mV/decade subthreshold swing

• Main Authors: Toh, E.-H., Wang, G.H., Weeks, D., Zhu, M., Bauer, M., Spear, J., Chan, L., Thomas, S.G., Samudra, G., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/84069
• 機構: National University of Singapore

10.1109/VTSA.2008.4530781