APA引文

Ang, K., Chin, H., Chui, K., Li, M., Samudra, G., Yeo, Y., & ENGINEERING, E. &. C. (2014). Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions.

Chicago Style Citation

Ang, K.-W., H.-C Chin, K.-J Chui, M.-F Li, G. Samudra, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. Carrier Backscattering Characteristics of Strained N-MOSFET Featuring Silicon-carbon Source/drain Regions. 2014.

MLA引文

Ang, K.-W., et al. Carrier Backscattering Characteristics of Strained N-MOSFET Featuring Silicon-carbon Source/drain Regions. 2014.