Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications

• Main Authors: Yu, H.Y., Kang, J.F., Ren, C., Chen, J.D., Hou, Y.T., Shen, C., Li, M.F., Chan, D.S.H., Bera, K.L., Tung, C.H., Kwong, D.-L.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: HfN; HfO 2; High-K gate dielectrics; Metal gate electrode; MOS devices
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82988

10.1109/LED.2003.820649