Bera, L., Choi, W., Tan, C., Samanta, S., Maiti, C., & ENGINEERING, E. &. C. (2014). High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films.

Bera, L.K., W.K Choi, C.S Tan, S.K Samanta, C.K Maiti, and ELECTRICAL & COMPUTER ENGINEERING. High Quality Gate Dielectrics Grown By Rapid Thermal Processing Using Split-N 2O Technique On Strained-Si 0.91Ge 0.09 Films. 2014.

Bera, L.K., et al. High Quality Gate Dielectrics Grown By Rapid Thermal Processing Using Split-N 2O Technique On Strained-Si 0.91Ge 0.09 Films. 2014.