Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique
10.1063/1.107664
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| المؤلفون الرئيسيون: | , , , , , |
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| مؤلفون آخرون: | |
| التنسيق: | مقال |
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2014
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| الوصول للمادة أونلاين: | http://scholarbank.nus.edu.sg/handle/10635/62823 |
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| المؤسسة: | National University of Singapore |
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sg-nus-scholar.10635-62823 |
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sg-nus-scholar.10635-628232024-11-11T16:30:55Z Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique Lau, W.S. Chong, T.C. Tan, L.S. Goo, C.H. Goh, K.S. Lee, K.M. ELECTRICAL ENGINEERING 10.1063/1.107664 Applied Physics Letters 61 1 49-51 2014-06-17T06:55:14Z 2014-06-17T06:55:14Z 1992 Article Lau, W.S., Chong, T.C., Tan, L.S., Goo, C.H., Goh, K.S., Lee, K.M. (1992). Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique. Applied Physics Letters 61 (1) : 49-51. ScholarBank@NUS Repository. https://doi.org/10.1063/1.107664 00036951 http://scholarbank.nus.edu.sg/handle/10635/62823 A1992JB74700017 Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| description |
10.1063/1.107664 |
| author2 |
ELECTRICAL ENGINEERING |
| author_facet |
ELECTRICAL ENGINEERING Lau, W.S. Chong, T.C. Tan, L.S. Goo, C.H. Goh, K.S. Lee, K.M. |
| format |
Article |
| author |
Lau, W.S. Chong, T.C. Tan, L.S. Goo, C.H. Goh, K.S. Lee, K.M. |
| spellingShingle |
Lau, W.S. Chong, T.C. Tan, L.S. Goo, C.H. Goh, K.S. Lee, K.M. Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique |
| author_sort |
Lau, W.S. |
| title |
Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique |
| title_short |
Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique |
| title_full |
Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique |
| title_fullStr |
Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique |
| title_full_unstemmed |
Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique |
| title_sort |
study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/62823 |
| _version_ |
1821221753603489792 |