Zhu, M., Chin, H., Tung, C., Yeo, Y., & ENGINEERING, E. &. C. (2014). In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applications.
Chicago Style CitationZhu, M., H.-C Chin, C.-H Tung, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. In Situ Silane Passivation of Gallium Arsenide and Deposition of High-permittivity Gate Dielectric for MOS Applications. 2014.
MLA CitationZhu, M., et al. In Situ Silane Passivation of Gallium Arsenide and Deposition of High-permittivity Gate Dielectric for MOS Applications. 2014.
Warning: These citations may not always be 100% accurate.