Zhu, M., Tung, C., Yeo, Y., & ENGINEERING, E. &. C. (2014). Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide.
Chicago Style CitationZhu, M., C.-H Tung, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. Aluminum Oxynitride Interfacial Passivation Layer for High-permittivity Gate Dielectric Stack On Gallium Arsenide. 2014.
MLA引文Zhu, M., C.-H Tung, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. Aluminum Oxynitride Interfacial Passivation Layer for High-permittivity Gate Dielectric Stack On Gallium Arsenide. 2014.
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