Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

• المؤلفون الرئيسيون: Wu, X, Yu, K, Cha, D, Bosman, M, Raghavan, N, Zhang, X, Li, K, Liu, Q, Sun, L, Pey, K
• مؤلفون آخرون: MATERIALS SCIENCE AND ENGINEERING
• التنسيق: مقال
• منشور في: 2020
• الموضوعات: Electrodes; Hafnium oxides; High resolution transmission electron microscopy; In situ processing; Oxygen vacancies; Silicon; Transmission electron microscopy; Computational performance; Hafnium dioxide; In-situ transmission electron microscopies; Interfacial defect; Resistive switching; Resistive switching devices; Resistive switching memory; Spatial and temporal correlation; Switching
• الوصول للمادة أونلاين: https://scholarbank.nus.edu.sg/handle/10635/182079
• المؤسسة: National University of Singapore

10.1002/advs.201800096