Tok, E., Neave, J., Zhang, J., & SCIENCE, M. (2014). Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286].
استشهاد بنمط شيكاغوTok, E.S., J.H Neave, J. Zhang, و MATERIALS SCIENCE. Comment On "A New Mechanism for Reentrant Behaviour in Semiconductor Epitaxy: A Reflection High-energy Electron Diffraction Study of the Growth of GaAs(1 1 1)A Thin Films" [Surf. Sci. 459 (2000) 277-286]. 2014.
MLA استشهادTok, E.S., J.H Neave, J. Zhang, و MATERIALS SCIENCE. Comment On "A New Mechanism for Reentrant Behaviour in Semiconductor Epitaxy: A Reflection High-energy Electron Diffraction Study of the Growth of GaAs(1 1 1)A Thin Films" [Surf. Sci. 459 (2000) 277-286]. 2014.