APA استشهاد

Ji, Y., Zhang, Z., Tan, S. T., Ju, Z., Kyaw, Z., Hasanov, N., . . . Engineering, S. o. E. a. E. (2013). Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier.

استشهاد بنمط شيكاغو

Ji, Yun, et al. Enhanced Hole Transport in InGaN/GaN Multiple Quantum Well Light-emitting Diodes With a P-type Doped Quantum Barrier. 2013.

MLA استشهاد

Ji, Yun, et al. Enhanced Hole Transport in InGaN/GaN Multiple Quantum Well Light-emitting Diodes With a P-type Doped Quantum Barrier. 2013.

تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.