Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors
SiC MESFETs have been designed, simulated, fabricated and characterized for high power, high frequency and high temperature applications due to the excellent electronic and physical properties of SiC, such as wide band gap, high breakdown electric field strength, large electron saturation velocity a...
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Theses and Dissertations |
| 出版: |
2008
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/4072 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 機構: | Nanyang Technological University |