Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks : a nanoscopic study

• المؤلفون الرئيسيون: Shubhakar, Kalya, Pey, Kin Leong, Kouda, Miyuki, Kakushima, Kuniyuki, Iwai, Hiroshi, Bosman, Michel, Kushvaha, Sunil Singh, O'Shea, Sean Joseph
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/104193; http://hdl.handle.net/10220/19769

Grain boundaries in the polycrystalline microstructure of post-annealed high-κ (HK) dielectrics are a major limitation in the reliability of HK dielectrics used for advanced CMOS technologies. Another challenge in the field of HK dielectrics is to ensure higher drain drive current in CMOS, while mai...