Compact Physical Implementation of Spiking Neural Network Using Ambipolar WSe2 n-type/p-type Ferroelectric Field-Effect Transistor

• Main Authors: Jiali Huo, Lingqi Li, Haofei Zheng, Jing Gao, Thaw Tint Te Tun, Heng Xiang, Kah Wee Ang
• 其他作者: ELECTRICAL AND COMPUTER ENGINEERING
• 格式: Article
• 出版: American Chemical Society 2025
• 主題: Ferroelectric Field-Effect Transistors; WSe2; HZO; Volatile; Nonvolatile; SNN
• 在線閱讀: https://scholarbank.nus.edu.sg/handle/10635/309069

10.1021/acsnano.4c11081