ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS

بواسطة HAN KAIZHEN
منشور في 2021

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness

بواسطة Han, Kaizhen, Samanta, Subhranu, Sun, Chen, Gong, Xiao
منشور في 2022

Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO_x/W cross-point structure

بواسطة Samanta, Subhranu, Gong, Xiao, Zhang, Panpan, Han, Kaizhen, Fong, Xuanyao
منشور في 2023

Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO_x-Based Flexible Cross-Point RRAM

بواسطة Samanta, Subhranu, Zhang, Panpan, Han, Kaizhen, Gong, Xiao, Chakraborty, Sandipan, Li, Yida, Fong, Xuanyao
منشور في 2023

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

بواسطة SAMANTA SUBHRANU, UMESH CHAND, XU SHENGQIANG, HAN KAIZHEN, WU YING, ANNIE KUMAR, LI YIDA, FONG XUANYAO, THEAN VOON YEW, AARON, GONG XIAO
منشور في 2021

Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width

بواسطة Kang, Yuye, Xu, Shengqiang, Han, Kaizhen, Kong, Eugene Y.-J., Song, Zhigang, Luo, Sheng, Kumar, Annie, Wang, Chengkuan, Fan, Weijun, Liang, Gengchiau, Gong, Xiao
منشور في 2022