Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon

由 Park, S.-J., Lee, H.-B., Shan, W.L., Chua, S.-J., Lee, J.-H., Hahm, S.-H.
出版 2014

Design of the layer structures for Schottky type AlGaN UV photodetector

由 Kim, B.-K., Kim, J.-K., Park, S.-J., Lee, H.-B., Lee, J.-H., Rue, G.-H., Lee, M.-B., Lee, Y.-H., Lee, J.-H., Hahm, S.-H.
出版 2014